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Principal TCAD Device Engineer

Lead development of TCAD models to advance DRAM/3D NAND memory devices
Boise, Idaho, United States
Senior
yesterday
Micron Technology

Micron Technology

Designs and manufactures advanced memory and storage solutions, including DRAM, NAND, and SSDs, for consumer, enterprise, and automotive markets.

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Principal TCAD Device Engineer

Our vision is to transform how the world uses information to enrich life for all.

Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever.

The TCAD Device Engineering team at Micron plays a critical role in shaping next-generation memory technologies. We work at the intersection of physics, process integration, and design, using advanced modeling and simulation to influence real silicon decisions. If you enjoy solving deep device problems before wafers are built, this team delivers impact early and often!

As a Principal TCAD Device Engineer, you will drive process and device modeling for advanced memory technologies. You will use innovative TCAD and AI tools to build devices, guide experiments, and fix complex device and circuit issues. This role partners closely with process integration, characterization, and design teams to accelerate learning and improve technology outcomes.

Responsibilities:

  • Perform process and device simulations using advanced TCAD tools
  • Design virtual DOEs to guide process experiments and device optimization
  • Use AI and Python-based automation to enhance TCAD workflows
  • Analyze device and circuit issues during technology development
  • Collaborate with cross-functional teams to connect modeling with silicon results

Minimum Qualifications:

  • PhD in Electrical Engineering or Physics with 2 years of semiconductor industry experience, or MS with 4 years, or BS with 6 years
  • Strong background in MOSFET device physics and semiconductor process integration
  • Hands-on experience with TCAD process and device simulation tools
  • Knowledge of CMOS or memory process flows and sub-10nm device physics
  • Strong communication skills and ability to work across disciplines

Preferred Qualifications:

  • Experience with DRAM, emerging memory, or 3D NAND technologies
  • Familiarity with advanced CMOS architectures such as FinFET, nanosheet, or HKMG
  • Experience with thermal or stress modeling using FEM tools
  • Knowledge of electrical device characterization and test structure design
  • Experience using AI tools and Python scripting to automate simulations

Micron is proud to be an equal opportunity workplace and is an affirmative action employer. All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, age, national origin, citizenship status, disability, protected veteran status, gender identity or any other factor protected by applicable federal, state, or local laws.

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Principal TCAD Device Engineer
Boise, Idaho, United States
Engineering
About Micron Technology
Designs and manufactures advanced memory and storage solutions, including DRAM, NAND, and SSDs, for consumer, enterprise, and automotive markets.